5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer
Overview
Power density is greatly improved in gallium nitride devices compared to silicon ones because GaN has the capacity to sustain much higher switching frequencies. It also has an increased ability to sustain elevated temperatures.
| A face Free-standing GaN Substrates |
| Item | GaN-FS-A-U-S | GaN-FS-A-N-S | GaN-FS-A-SI-S | 
Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 |
| Thickness | 350 ±25 µm |
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2° |
| Conduction Type | N-type | N-type | Semi-Insulating |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | - 10 µm ≤ BOW ≤ 10 µm |
| Front Surface Roughness | < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy) |
| Back Surface Roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) |
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere |
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.
If δ2= - 1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.
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FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Product Tags:
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A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped Images
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